Abstract
We demonstrate thin film x-ray reflectivity measurements with picosecond time resolution. Amorphous carbon films with a thickness of 46 nm were excited with laser pulses characterized by 100 fs duration, a wavelength of 800 nm, and a fluence of 70 mJ/cm2. The laser-induced stress caused a rapid expansion of the thin film followed by a relaxation of the film thickness as heat diffused into the silicon substrate. We were able to measure changes in film thickness as small as 0.2 nm. The relaxation dynamics are consistent with a model which accounts for carrier-enhanced substrate heat diffusivity.