Abstract
We present results of damage studies conducted at the Free Electron LASer in Hamburg (FLASH) facility with 13.5 nm (91.8 eV) and 7 nm (177.1 eV) radiations. The laser beam was focused on a sample of 890-nm-thick amorphous carbon coated on a silicon wafer mimicking a x-ray mirror. The fluence threshold for graphitization was determined for different grazing angles above and below the critical angle. The observed angular dependence of Fth is explained by the variation in absorption depth and reflectivity. Moreover, the absorbed local dose needed for the phase transition leading to graphitization is shown to vary with the radiation wavelength.