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Journalpaper

Measurement of shallow arsenic impurity profiles in semiconductor silicon using time-of-flight secondary ion mass spectrometry and total reflection X-ray fluorescence spectrometry

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  • URL: https://publications.hereon.de/id/13054/
  • Authors:Schwenke, H., Knoth, J., Fabry, L., Pahlke, S., Scholz, R., Frey, L.
  • Year:1997
  • In: Journal of the Electrochemical Society
  • Volume:144
  • Issue:11
  • Pages: 3979 - 3983
  • Type:Journalpaper
  • ISSN: 0013-4651
  • Cite as: Schwenke, H.; Knoth, J.; Fabry, L.; Pahlke, S.; Scholz, R.; Frey, L.: Measurement of shallow arsenic impurity profiles in semiconductor silicon using time-of-flight secondary ion mass spectrometry and total reflection X-ray fluorescence spectrometry. In: Journal of the Electrochemical Society. Vol. 144 (1997) 11, 3979 - 3983.
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