Measurement of shallow arsenic impurity profiles in semiconductor silicon using time-of-flight secondary ion mass spectrometry and total reflection X-ray fluorescence spectrometry
No abstract available.
URL: https://publications.hereon.de/id/13054/
Authors:Schwenke, H.,Knoth, J.,Fabry, L.,Pahlke, S.,Scholz, R.,Frey, L.
Year:1997
In: Journal of the Electrochemical Society
Volume:144
Issue:11
Pages:3979-3983
Type:journal article
ISSN: 0013-4651
Cite as: Schwenke, H.; Knoth, J.; Fabry, L.; Pahlke, S.; Scholz, R.; Frey, L.: Measurement of shallow arsenic impurity profiles in semiconductor silicon using time-of-flight secondary ion mass spectrometry and total reflection X-ray fluorescence spectrometry. Journal of the Electrochemical Society. 1997. vol. 144, no. 11, 3979-3983.
