@misc{hlushko_ion_irradiationinduced_2021, 
author={Hlushko, K., Mackova, A., Zalesak, J., Burghammer, M., Davydok, A., Krywka, C., Daniel, R., Keckes, J., Todt, J.},
title={Ion irradiation-induced localized stress relaxation in W thin film revealed by cross-sectional X-ray nanodiffraction},
year={2021},
howpublished = {journal article},
doi = {https://doi.org/10.1016/j.tsf.2021.138571},
abstract = {The influence of ion irradiation on residual stress and microstructure of thin films is not fully understood. Here, 5 MeV Si2+ ions were used to irradiate a 7 µm thick tungsten film prepared by magnetron sputtering. Cross-sectional X-ray nanodiffraction and electron microscopy analyses revealed a depth-localized relaxation of in-plane compressive residual stresses from to  GPa after the irradiation, which is correlated with the calculated displacements per atom within a ~2 µm thick film region. The relaxation can be explained by the irradiation-induced removal of point defects from the crystal lattice, resulting in a reduction of strains of the 3rd order, manifested by a decrease of X-ray diffraction peak broadening, an increase of peak intensities and a decrease of lattice parameter. The results indicate that ion irradiation enables control over the residual stress state at distinct depths in the material.},
note = {Online available at: \url{https://doi.org/10.1016/j.tsf.2021.138571} (DOI). Hlushko, K.; Mackova, A.; Zalesak, J.; Burghammer, M.; Davydok, A.; Krywka, C.; Daniel, R.; Keckes, J.; Todt, J.: Ion irradiation-induced localized stress relaxation in W thin film revealed by cross-sectional X-ray nanodiffraction. Thin Solid Films. 2021. vol. 722, 138571. DOI: 10.1016/j.tsf.2021.138571}}