@misc{salak_highpressure_induced_2014, 
author={Salak, A.N., Zhaludkevich, A.L., Ignatenko, O.V., Lisenkov, A.D., Yaremchenko, A.A., Zheludkevich, M.L., Ferreira, M.G.S.},
title={High-pressure induced phase formation in the CuGaS2–CuGaO2 chalcopyrite–delafossite system},
year={2014},
howpublished = {journal article},
doi = {https://doi.org/10.1002/pssb.201451013},
abstract = {Phase formation under high pressure in the chalcopyrite–delafossite system has been studied at 5 GPa and 500–1000 °C. The parent chalcopyrite composition used in this study was slightly Cu-deficient, corresponding to the chemical formula (Cu,Ga)0.905GaS2. It was revealed that under high-pressure and high-temperature conditions, a mixture of the parent phases partly decomposes to form Cu2S and Ga2O3. The defect chalcopyrite (Cu,Ga)0.905GaS2 splits into a near-stoichiometric CuGaS2 and a Cu-deficient cubic (sphalerite-like) phase of the (Cu,Ga)0.8S composition. Such a phenomenon has been considered in terms of characteristic features of chalcopyrite and sphalerite crystal structures. Delafossite CuGaO2 at 5 GPa and 1000 °C was found to recrystallize entirely, which results in the disappearance of the stacking faults in its layered structure.},
note = {Online available at: \url{https://doi.org/10.1002/pssb.201451013} (DOI). Salak, A.; Zhaludkevich, A.; Ignatenko, O.; Lisenkov, A.; Yaremchenko, A.; Zheludkevich, M.; Ferreira, M.: High-pressure induced phase formation in the CuGaS2–CuGaO2 chalcopyrite–delafossite system. Physica Status Solidi  B. 2014. vol. 251, no. 6, 1192-1196. DOI: 10.1002/pssb.201451013}}