%0 journal article
%@ 0021-8979
%A Kreuzpaintner, W.,Stoermer, M.,Lott, D.,Solina, D.,Schreyer, A.

%D 2008
%J Journal of Applied Physics
%N 11
%P 114302 
%R doi:10.1063/1.3032383
%T Epitaxial Growth of nickel on Si(100) by DC Magnetron Sputtering
%U https://doi.org/10.1063/1.3032383
11 
%X The influence of the substrate temperature on the growth of highly textured Ni(111) and epitaxial Ni(200) with the relationships Ni[100]||Si[110] and Ni(001)||Si(001) on hydrogen terminated Si(100) wafer substrates by means of direct current magnetron sputtering is reported. In order to minimize crystal defect formation and to achieve a high quality epitaxial growth of Ni on Si, a two step deposition process was developed whereby different deposition conditions were used for an initial nickel seed layer and the remaining nickel film. The in-plane and out-of-plane structural properties of the films were investigated using x-ray scattering techniques, whereas magneto-optical Kerr effect and neutron reflectometry were used to confirm the magnetic nature of the epitaxially deposited nickel films.