%0 journal article
%@ 0003-6951
%A Hoeglund, C.,Beckers, M.,Schell, N.,Borany, J.v.,Birch, J.,Hultmann, L.

%D 2007
%J Applied Physics Letters
%N 17
%P 174106 
%R doi:10.1063/1.2731520
%T Topotaxial growht of Ti2AlN by solid state reaction in AlN/Ti(0001) multilayer thin films
%U https://doi.org/10.1063/1.2731520
17 
%X The formation of Ti2AlN by solid state reaction between layers of wurtzite-AlN and -Ti was,characterized by in situ x-ray scattering. The sequential deposition of these layers by dual magnetron,sputtering onto Al2O3(0001) at 200 °C yielded smooth, heteroepitaxial (0001) oriented films, with,abrupt AlN/Ti interfaces as shown by x-ray reflectivity and Rutherford backscattering spectroscopy.,Annealing at 400 °C led to AlN decomposition and diffusion of released Al and N into the Ti layers,,with formation of Ti3AlN. Further annealing at 500 °C resulted in a phase transformation into,Ti2AlN(0001) after only 5 min.