%0 journal article
%@ 0013-4651
%A Schwenke, H.,Knoth, J.,Fabry, L.,Pahlke, S.,Scholz, R.,Frey, L.

%D 1997
%J Journal of the Electrochemical Society
%N 11
%P 3979-3983 

%T Measurement of shallow arsenic impurity profiles in semiconductor silicon using time-of-flight secondary ion mass spectrometry and total reflection X-ray fluorescence spectrometry
%U 
11 
%X