@misc{philippikobs_impact_of_2019, 
author={Philippi-Kobs, A.,Farhadi, A.,Matheis, L.,Lott, D.,Chuvilin, A.,Oepen, H.P.},
title={Impact of Symmetry on Anisotropic Magnetoresistance in Textured Ferromagnetic Thin Films},
year={2019},
howpublished = {journal article},
doi = {https://doi.org/10.1103/PhysRevLett.123.137201},
abstract = {We report on the magnetoresistance of textured films consisting of 3d-ferromagnetic layers sandwiched by Pt. While the conventional cos2φ behavior of the anisotropic magnetoresistance (AMR) is found when the magnetization M is varied in the film plane, cos2nθ contributions (2n≤6) exist for rotating M in the plane perpendicular to the current. This finding is explained by the symmetry-adapted modeling of AMR of textured films demonstrating that the cos2θ behavior cannot be used as a fingerprint for the presence of spin Hall magnetoresistance (SMR). Further, the interfacial MR contributions for Pt/Ni/Pt contradict the SMR behavior confirming the dominant role of AMR in all-metallic systems.},
note = {Online available at: \url{https://doi.org/10.1103/PhysRevLett.123.137201} (DOI). Philippi-Kobs, A.; Farhadi, A.; Matheis, L.; Lott, D.; Chuvilin, A.; Oepen, H.: Impact of Symmetry on Anisotropic Magnetoresistance in Textured Ferromagnetic Thin Films. Physical Review Letters. 2019. vol. 123, no. 13, 137201. DOI: 10.1103/PhysRevLett.123.137201}}