@misc{hoeglund_topotaxial_growht_2007, 
author={Hoeglund, C.,Beckers, M.,Schell, N.,Borany, J.v.,Birch, J.,Hultmann, L.},
title={Topotaxial growht of Ti2AlN by solid state reaction in AlN/Ti(0001) multilayer thin films},
year={2007},
howpublished = {journal article},
doi = {https://doi.org/10.1063/1.2731520},
abstract = {The formation of Ti2AlN by solid state reaction between layers of wurtzite-AlN and -Ti was,characterized by in situ x-ray scattering. The sequential deposition of these layers by dual magnetron,sputtering onto Al2O3(0001) at 200 °C yielded smooth, heteroepitaxial (0001) oriented films, with,abrupt AlN/Ti interfaces as shown by x-ray reflectivity and Rutherford backscattering spectroscopy.,Annealing at 400 °C led to AlN decomposition and diffusion of released Al and N into the Ti layers,,with formation of Ti3AlN. Further annealing at 500 °C resulted in a phase transformation into,Ti2AlN(0001) after only 5 min.},
note = {Online available at: \url{https://doi.org/10.1063/1.2731520} (DOI). Hoeglund, C.; Beckers, M.; Schell, N.; Borany, J.; Birch, J.; Hultmann, L.: Topotaxial growht of Ti2AlN by solid state reaction in AlN/Ti(0001) multilayer thin films. Applied Physics Letters. 2007. vol. 90, no. 17, 174106. DOI: 10.1063/1.2731520}}